DSS4160U-7, SC703

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185 ֏

Кратность заказа 5 шт.

от 50 шт. — 102 ֏

от 150 шт. — 75 ֏

от 500 шт. — 65 ֏

5 шт. на сумму 925 ֏

Номенклатурный номер: 8017564576

Бренд: DIODES INC.

60V 400mW 200@500mA,5V 1A NPN SOT-323-3 Bipolar Transistors - BJT ROHS

Collector Current (Ic)	1A
Collector Cut-Off Current (Icbo)	100nA
Collector-Emitter Breakdown Voltage (Vceo)	60V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	280mV@100mA, 1A
DC Current Gain (hFE@Ic,Vce)	200@500mA, 5V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	400mW
Transistor Type	NPN
Transition Frequency (fT)	150MHz
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Voltage	60 V
Maximum DC Collector Current	1 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	400 mW
Minimum DC Current Gain	200
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-323(SC-70)
Pin Count	3
Transistor Configuration	Single
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	280 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	150 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Pd - Power Dissipation:	400 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.03