TPS1120DR, 15V 1.17A 180mOhm@10V,1.5A 840mW 1.5V@250uA 2 P-Channel SOP-8 MOSFETs
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см. техническую документацию
см. техническую документацию
3 000 ֏
от 10 шт. —
2 120 ֏
от 30 шт. —
1 910 ֏
1 шт.
на сумму 3 000 ֏
Описание
Transistors/Thyristors\MOSFETs
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R
Технические параметры
Continuous Drain Current (Id) | 1.17A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 180mΩ@10V, 1.5A |
Drain Source Voltage (Vdss) | 15V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
Power Dissipation (Pd) | 840mW |
Total Gate Charge (Qg@Vgs) | 5.45nC@10V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Dual Dual Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Material | Si |
Maximum Continuous Drain Current (A) | 1.17 |
Maximum Drain Source Resistance (mOhm) | 400 4.5V |
Maximum Drain Source Voltage (V) | 15 |
Maximum Gate Source Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 125 |
Maximum Power Dissipation (mW) | 840 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Product Category | Small Signal |
Standard Package Name | SOP |
Supplier Package | SOIC |
Typical Fall Time (ns) | 2 |
Typical Gate Charge @ 10V (nC) | 5.45 |
Typical Gate Charge @ Vgs (nC) | 5.45 10V |
Typical Rise Time (ns) | 10 |
Typical Turn-Off Delay Time (ns) | 13 |
Typical Turn-On Delay Time (ns) | 4.5 |
Вес, г | 0.11 |