TPH2R608NH,L1Q, 75V 150A 2.6mOhm@10V,50A 142W 4V@1mA N Channel SOP MOSFETs
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см. техническую документацию
см. техническую документацию
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Описание
U-MOSVIII-H Low Voltage High Efficiency MOSFETs
Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Технические параметры
Brand | Toshiba |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 5000 |
Fall Time | 15 ns |
Id - Continuous Drain Current | 168 A |
Manufacturer | Toshiba |
Maximum Operating Temperature | +150 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | SOP-Advance-8 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 142 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 72 nC |
Rds On - Drain-Source Resistance | 2.6 mOhms |
Rise Time | 11 ns |
Series | TPH2R608NH |
Subcategory | MOSFETs |
Technology | Si |
Tradename | U-MOSVIII-H |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 56 ns |
Typical Turn-On Delay Time | 30 ns |
Vds - Drain-Source Breakdown Voltage | 75 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 2 V |
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 15 ns |
Id - Continuous Drain Current: | 168 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOP-8 |
Pd - Power Dissipation: | 142 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 72 nC |
Rds On - Drain-Source Resistance: | 2.6 mOhms |
Rise Time: | 11 ns |
Series: | TPH2R608NH |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | U-MOSVIII-H |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 56 ns |
Typical Turn-On Delay Time: | 30 ns |
Vds - Drain-Source Breakdown Voltage: | 75 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.85 |
Техническая документация
Datasheet
pdf, 265 КБ
Сроки доставки
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