BST52TA, 80V 1000@10V,150mA NPN 10uA 500mA -55°C~+150°C@(Tj) 1W 1.3V@500mA,500uA SOT-89-3 DarlIngton TransIstors
![Фото 1/2 BST52TA, 80V 1000@10V,150mA NPN 10uA 500mA -55°C~+150°C@(Tj) 1W 1.3V@500mA,500uA SOT-89-3 DarlIngton TransIstors](https://static.chipdip.ru/lib/797/DOC016797410.jpg)
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см. техническую документацию
см. техническую документацию
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423 ֏
Кратность заказа 5 шт.
от 50 шт. —
264 ֏
5 шт.
на сумму 2 115 ֏
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 90 V |
Collector- Emitter Voltage VCEO Max: | 80 V |
Configuration: | Single |
Continuous Collector Current: | 0.5 A |
DC Collector/Base Gain hfe Min: | 1000 at 150 mA at 10 V, 2000 at 500 mA at 10 V |
DC Current Gain hFE Max: | 1000 |
Emitter- Base Voltage VEBO: | 10 V |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 0.5 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-89 |
Pd - Power Dissipation: | 1 W |
Product Category: | Darlington Transistors |
Product Type: | Darlington Transistors |
Series: | BST52 |
Subcategory: | Transistors |
Transistor Polarity: | NPN |
Maximum Base Emitter Saturation Voltage | 1.9 V |
Maximum Collector Base Voltage | 90 V |
Maximum Collector Emitter Saturation Voltage | 1.3 V |
Maximum Collector Emitter Voltage | 80 V |
Maximum Continuous Collector Current | 500 mA |
Maximum Emitter Base Voltage | 10 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1 W |
Minimum DC Current Gain | 1000 |
Minimum Operating Temperature | -65 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-89 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Width | 2.6mm |
Вес, г | 0.22 |