ZTX694B, 100nA 120V 1W 150@400mA,2V 500mA 130MHz 500mV@400mA,5mA NPN -55°C~+200°C@(Tj) TO-92-3 BIpolar TransIstors - BJT ROHS
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см. техническую документацию
см. техническую документацию
840 ֏
от 10 шт. —
484 ֏
от 30 шт. —
405 ֏
от 100 шт. —
327 ֏
1 шт.
на сумму 840 ֏
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | 500 mA |
| DC Current Gain hFE Max: | 500 at 100 mA, 2 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 130 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX694 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.23 |
Техническая документация
Datasheet
pdf, 69 КБ
