2SC3325-Y,LF, Транзистор биполярный BJT 100 нА 50 В 200мВт 120 при 100 мА, 1 В 500 мА 300 МГц 100 мВ при 100 мА, 10 мА NPN +150°C @(Tj) SOT-

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11220 шт., срок 5-6 недель

84 ֏

Кратность заказа 10 шт.

10 шт. на сумму 840 ֏

Альтернативные предложения2

Номенклатурный номер: 8017603547

Бренд: Toshiba

Transistors/Thyristors\Bipolar (BJT)

Collector Current (Ic)	500mA
Collector Cut-Off Current (Icbo)	100nA
Collector-Emitter Breakdown Voltage (Vceo)	50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	100mV@100mA, 10mA
DC Current Gain (hFE@Ic,Vce)	120@100mA, 1V
Power Dissipation (Pd)	200mW
Transistor Type	NPN
Transition Frequency (fT)	300MHz
Collector-Emitter Breakdown Voltage	50V
Maximum DC Collector Current	500mA
Pd - Power Dissipation	200mW
Brand:	Toshiba
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	100 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	70 at 100 mA, 1 V
DC Current Gain hFE Max:	240 at 100 mA, 1 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	TO-236-3
Pd - Power Dissipation:	200 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Series:	2SC3325
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.01