CSD17578Q3A, 30V 20A 7.3mOhm@10V,10A 3.2W 1.9V@250uA N Channel PDFN3333-8 MOSFETs
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930 ֏
от 10 шт. —
580 ֏
от 30 шт. —
449 ֏
от 100 шт. —
372 ֏
1 шт.
на сумму 930 ֏
Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 1 ns |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 37 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17.1 nC |
| Rds On - Drain-Source Resistance: | 7.3 mOhms |
| Rise Time: | 6 ns |
| Series: | CSD17578Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 13 ns |
| Typical Turn-On Delay Time: | 2 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Material | Si |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 14 |
| Maximum Diode Forward Voltage (V) | 1 |
| Maximum Drain Source Resistance (mOhm) | 7.3@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Resistance (Ohm) | 3.6 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 1.9 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 60 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 142 |
| Minimum Gate Threshold Voltage (V) | 1.1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | NexFET |
| Product Category | Power MOSFET |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 1 |
| Typical Gate Charge @ 10V (nC) | 17.1 |
| Typical Gate Charge @ Vgs (nC) | 7.9@4.5V|17.1@10V |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Typical Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Drain Charge (nC) | 1.7 |
| Typical Gate to Source Charge (nC) | 3.3 |
| Typical Input Capacitance @ Vds (pF) | 1150@15V |
| Typical Output Capacitance (pF) | 134 |
| Typical Reverse Recovery Charge (nC) | 4.4 |
| Typical Reverse Recovery Time (ns) | 6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 56@15V |
| Typical Rise Time (ns) | 6 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Turn-On Delay Time (ns) | 2 |
| Brand | Texas Instruments |
| Factory Pack Quantity | 250 |
| Fall Time | 1 ns |
| Forward Transconductance - Min | 48 S |
| Id - Continuous Drain Current | 14 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSONP-8 |
| Pd - Power Dissipation | 37 W |
| Qg - Gate Charge | 7.9 nC |
| Rds On - Drain-Source Resistance | 8.2 mOhms |
| Rise Time | 6 ns |
| RoHS | Details |
| Series | CSD17578Q3A |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 2 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Вес, г | 0.17 |
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