DXT13003DG-13, 450V 700mW 5@1A,2V 1.3A 4MHz 400mV@1A,250mA NPN -55°C~+150°C@(Tj) SOT-223-4 BIpolar TransIstors - BJT
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см. техническую документацию
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5 шт.
на сумму 2 650 ֏
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Описание
Diodes Incorporated DXT1300 High Voltage Power Transistors
Diodes Incorporated DXT1300 NPN High Voltage Power Transistors provide a 450V collector-emitter voltage rating and a high continuous collector current rating of 1.5A. Halogen and antimony free, these devices feature matte tin plated leads solderable per MIL-STD-202, Method 208, Level 1 per J-STD-020 moisture sensitivity, and UL Flammability Classification Rating 94V-0. Available in SOT223 and TO252 (DPAK) packages, DXT1300 NPN High Voltage Power Transistors are ideal for low power AC-DC SMPS applications such as battery chargers for mobile phone /tablets /smartphones, power supply for DVD/STB, and LED lighting.
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Diodes Incorporated DXT1300 NPN High Voltage Power Transistors provide a 450V collector-emitter voltage rating and a high continuous collector current rating of 1.5A. Halogen and antimony free, these devices feature matte tin plated leads solderable per MIL-STD-202, Method 208, Level 1 per J-STD-020 moisture sensitivity, and UL Flammability Classification Rating 94V-0. Available in SOT223 and TO252 (DPAK) packages, DXT1300 NPN High Voltage Power Transistors are ideal for low power AC-DC SMPS applications such as battery chargers for mobile phone /tablets /smartphones, power supply for DVD/STB, and LED lighting.
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Технические параметры
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Collector-Emitter Saturation Voltage | 400 mV |
| Configuration | Single |
| Continuous Collector Current | 1.3 A |
| DC Collector/Base Gain Hfe Min | 5 at 1 A, 2 V |
| DC Current Gain HFE Max | 40 |
| Emitter- Base Voltage VEBO | 9 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product FT | 4 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 3 W |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | DXT13003 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 700 V |
| Collector- Emitter Voltage VCEO Max: | 450 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Configuration: | Single |
| Continuous Collector Current: | 1.3 A |
| DC Collector/Base Gain hfe Min: | 5 at 1 A, 2 V |
| DC Current Gain hFE Max: | 40 |
| Emitter- Base Voltage VEBO: | 9 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 4 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 1.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | DXT13003 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.16 |
Техническая документация
Datasheet
pdf, 367 КБ
Datasheet DXT13003DG-13
pdf, 372 КБ
