IKW50N65ES5, TO-247-3 IGBTs

IKW50N65ES5, TO-247-3 IGBTs
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Номенклатурный номер: 8017625447

Описание

TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Технические параметры

Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.35 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Factory Pack Quantity: Factory Pack Quantity: 240
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage: -20 V, +20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Operating Temperature Range: -40 C to+175 C
Package / Case: TO-247-3
Packaging: Tube
Part # Aliases: SP001319682 IKW50N65ES5XKSA1
Pd - Power Dissipation: 274 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Series: TRENCHSTOP 5 S5
Subcategory: IGBTs
Technology: Si
Tradename: TRENCHSTOP
Вес, г 38

Техническая документация

Datasheet IKW50N65ES5
pdf, 2064 КБ