IKW50N65ES5, TO-247-3 IGBTs
![IKW50N65ES5, TO-247-3 IGBTs](https://static.chipdip.ru/lib/517/DOC006517016.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 450 ֏
от 10 шт. —
3 470 ֏
от 30 шт. —
2 990 ֏
Добавить в корзину 1 шт.
на сумму 4 450 ֏
Описание
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.35 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Operating Temperature Range: | -40 C to+175 C |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | SP001319682 IKW50N65ES5XKSA1 |
Pd - Power Dissipation: | 274 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | TRENCHSTOP 5 S5 |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP |
Вес, г | 38 |
Техническая документация
Datasheet IKW50N65ES5
pdf, 2064 КБ