FMMT549TA, 100nA 30V 500mW 200@500mA,2V 1A 100MHz 300mV@100mA,1mA PNP -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT
![FMMT549TA, 100nA 30V 500mW 200@500mA,2V 1A 100MHz 300mV@100mA,1mA PNP -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT](https://static.chipdip.ru/lib/472/DOC018472445.jpg)
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см. техническую документацию
см. техническую документацию
710 ֏
1 шт.
на сумму 710 ֏
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 35 V |
Collector- Emitter Voltage VCEO Max: | 30 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | -1 A |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 100 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 1 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 500 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | FMMT54 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 0.02 |
Техническая документация
Datasheet FMMT549ATA
pdf, 219 КБ