FMMT549TA, 100nA 30V 500mW 200@500mA,2V 1A 100MHz 300mV@100mA,1mA PNP -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT

FMMT549TA, 100nA 30V 500mW 200@500mA,2V 1A 100MHz 300mV@100mA,1mA PNP -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT
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см. техническую документацию
710 ֏
1 шт. на сумму 710 ֏
Номенклатурный номер: 8017625848
Бренд: DIODES INC.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 35 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Single
Continuous Collector Current: -1 A
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 100 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 500 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: FMMT54
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Вес, г 0.02

Техническая документация

Datasheet FMMT549ATA
pdf, 219 КБ