DN350T05-7, 50nA 350V 300mW 20@50mA,10V 500mA 50MHz 1V@50mA,5mA NPN -65°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT

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115 ֏

Кратность заказа 5 шт.

от 50 шт. — 71 ֏

от 150 шт. — 58 ֏

от 500 шт. — 50 ֏

5 шт. на сумму 575 ֏

Номенклатурный номер: 8017625924

Бренд: DIODES INC.

Brand	Diodes Incorporated
Collector- Base Voltage VCBO	350 V
Collector- Emitter Voltage VCEO Max	350 V
Collector-Emitter Saturation Voltage	1 V
Configuration	Single
DC Collector/Base Gain Hfe Min	15 at 100 mA, 10 V
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	50 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	500 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Packaging	Cut Tape or Reel
Pd - Power Dissipation	300 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	DN350
Subcategory	Transistors
Transistor Polarity	NPN
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	350 V
Collector- Emitter Voltage VCEO Max:	350 V
Collector-Emitter Saturation Voltage:	1 V
Configuration:	Single
DC Collector/Base Gain hfe Min:	15 at 100 mA, 10 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	300 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	DN350
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.02