CSD87381P, МОП-Транзистор ПТАБ-5
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см. техническую документацию
см. техническую документацию
750 ֏
от 10 шт. —
484 ֏
от 30 шт. —
374 ֏
от 100 шт. —
307 ֏
1 шт.
на сумму 750 ֏
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Development Kit | CSD87381PEVM-603 |
| Factory Pack Quantity | 2500 |
| Fall Time | 3 ns, 2.9 ns |
| Forward Transconductance - Min | 40 S, 89 S |
| Id - Continuous Drain Current | 8 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 2 Channel |
| Package / Case | PTAB-5 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 4 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 3.9 nC, 8.9 nC |
| Rds On - Drain-Source Resistance | 16.3 mOhms, 7.6 mOhms |
| Rise Time | 19.3 ns, 16.3 ns |
| Series | CSD87381P |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 10.6 ns, 16.8 ns |
| Typical Turn-On Delay Time | 6.7 ns, 7.9 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.1 V, 1 V |
| Вес, г | 0.12 |
Техническая документация
Datasheet CSD87381P
pdf, 1068 КБ
