CSD25483F4, PicoStar-3 MOSFETs
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см. техническую документацию
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 7 ns |
Forward Transconductance - Min | 1.4 S |
Id - Continuous Drain Current | 1.6 A |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | PICOSTAR-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 500 mW(1/2 W) |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 960 pC |
Rds On - Drain-Source Resistance | 1.07 Ohms |
Rise Time | 3.7 ns |
Series | CSD25483F4 |
Subcategory | MOSFETs |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 17.4 ns |
Typical Turn-On Delay Time | 4.3 ns |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | 12 V |
Vgs Th - Gate-Source Threshold Voltage | 950 mV |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 9000 |
Fall Time: | 7 ns |
Forward Transconductance - Min: | 1.4 S |
Id - Continuous Drain Current: | 1.6 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | PICOSTAR-3 |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 960 pC |
Rds On - Drain-Source Resistance: | 1.07 Ohms |
Rise Time: | 3.7 ns |
Series: | CSD25483F4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 17.4 ns |
Typical Turn-On Delay Time: | 4.3 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 950 mV |
Height | 0.35 mm |
Length | 1 mm |
RoHS | Details |
Width | 0.64 mm |
Вес, г | 0.02 |
Техническая документация
Datasheet CSD25483F4
pdf, 1876 КБ
Документация
pdf, 795 КБ