IXBH2N250, 32W -55°C~+150°C@(Tj) 5A 2500V 13A TO-247-3 IGBTs
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18 800 ֏
от 10 шт. —
17 200 ֏
от 30 шт. —
14 700 ֏
Добавить в корзину 1 шт.
на сумму 18 800 ֏
Описание
32W 5A 2.5kV TO-247-3 IGBTs ROHS
Технические параметры
| Collector Current (Ic) | 5A |
| Collector-Emitter Breakdown Voltage (Vces) | 2.5kV |
| Diode Reverse Recovery Time (Trr) | 920ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@15V, 2A |
| Input Capacitance (Cies@Vce) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 32W |
| Total Gate Charge (Qg@Ic,Vge) | 10.6nC |
| Turn?on Switching Loss (Eon) | - |
| Type | - |
| California Prop 65 | Warning Information |
| Current - Collector (Ic) (Max) | 5A |
| Current - Collector Pulsed (Icm) | 13A |
| ECCN | EAR99 |
| Gate Charge | 10.6nC |
| HTSUS | 8541.29.0095 |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 32W |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 920ns |
| RoHS Status | ROHS3 Compliant |
| Series | BIMOSFETв„ў -> |
| Supplier Device Package | TO-247AD (IXBH) |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Brand: | IXYS |
| Collector- Emitter Voltage VCEO Max: | 2.5 kV |
| Collector-Emitter Saturation Voltage: | 3.8 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 5 A |
| Continuous Collector Current Ic Max: | 13 A |
| Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | IXYS |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 32 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 8.54 |
