FMMT417TD, 100nA 100V 500mW 25@10mA,10V 500mA 40MHz 500mV@10mA,1mA NPN -55°C~+150°C@(Tj) SOT-23-3 BIpolar TransIstors - BJT ROHS
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см. техническую документацию
см. техническую документацию
10 300 ֏
от 10 шт. —
8 400 ֏
от 30 шт. —
7 000 ֏
от 100 шт. —
5 300 ֏
1 шт.
на сумму 10 300 ֏
Описание
Transistors/Thyristors\Bipolar (BJT)
Технические параметры
| Collector Current (Ic) | 500mA |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@10mA, 1mA |
| DC Current Gain (hFE@Ic,Vce) | 25@10mA, 10V |
| Power Dissipation (Pd) | 330mW |
| Transistor Type | NPN |
| Transition Frequency (fT) | 40MHz |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 320 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | 500 mA |
| DC Collector/Base Gain hfe Min: | 25 at 10 mA, 10 V |
| DC Current Gain hFE Max: | 25 at 10 mA, 10 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Gain Bandwidth Product fT: | 40 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FMMT41 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.008 |
Техническая документация
Datasheet
pdf, 534 КБ
