ZXT11N20DFTA, 100nA 20V 625mW 100@5A,2V 2.5A 160MHz 90mV@2.5A,250mA NPN -55°C~+150°C@(Tj) SOT-23-3 BIpolar TransIstors - BJT

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379 ֏

от 10 шт. — 282 ֏

от 30 шт. — 220 ֏

от 100 шт. — 192 ֏

1 шт. на сумму 379 ֏

Номенклатурный номер: 8017629567

Бренд: DIODES INC.

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	20 V
Collector-Emitter Saturation Voltage:	90 mV
Configuration:	Single
Continuous Collector Current:	2.5 A
Emitter- Base Voltage VEBO:	7.5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	160 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	2.5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXT11N20
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.02