TPN3R704PL,L1Q, TSON-8(3.1x3.1) MOSFETs
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1243 шт., срок 5-6 недель
1 150 ֏
1 шт.
на сумму 1 150 ֏
Альтернативные предложения1
Описание
U-MOSIX-H MOSFETs
Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 6.2 ns |
Id - Continuous Drain Current: | 80 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TSON-Advance-8 |
Pd - Power Dissipation: | 86 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 27 nC |
Rds On - Drain-Source Resistance: | 6 mOhms |
Rise Time: | 5.3 ns |
Series: | TPN3R704PL |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | U-MOSIX-H |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 24 ns |
Typical Turn-On Delay Time: | 14.7 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Вес, г | 0.06 |
Техническая документация
Datasheet
pdf, 477 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 25 августа1 | бесплатно |
HayPost | 28 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг