CSD16404Q5A, VSON-CLIP-8(6x5) MOSFETs
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см. техническую документацию
1 280 ֏
от 10 шт. —
750 ֏
от 30 шт. —
660 ֏
от 100 шт. —
540 ֏
1 шт.
на сумму 1 280 ֏
Описание
Texas Instruments NexFET™ Power MOSFET
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
Крутизна характеристики S,А/В | 57 |
Максимальное пороговое напряжение затвор-исток Uзи макс.,В | 1.8 |
Сопротивление канала в открытом состоянии Rси вкл.,мОм | 7.2 |
Температура, С | -55…+150 |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 4.6 ns |
Forward Transconductance - Min: | 57 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 6.5 nC |
Rds On - Drain-Source Resistance: | 5.7 mOhms |
Rise Time: | 13.4 ns |
Series: | CSD16404Q5A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 8.4 ns |
Typical Turn-On Delay Time: | 7.8 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -16 V, +16 V |
Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
Вес, г | 0.03 |