CSD88539ND, SOIC-8 MOSFETs
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см. техническую документацию
см. техническую документацию
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Описание
TI N-Channel 8-23-12
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 4 ns |
Id - Continuous Drain Current: | 15 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOIC-8 |
Pd - Power Dissipation: | 2.1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7.2 nC |
Rds On - Drain-Source Resistance: | 28 mOhms |
Rise Time: | 9 ns |
Series: | CSD88539ND |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 14 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
Вес, г | 0.12 |