CSD25480F3, PicoStar-3 MOSFETs
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
119 ֏
Кратность заказа 5 шт.
от 50 шт. —
74 ֏
от 150 шт. —
60 ֏
от 500 шт. —
50 ֏
Добавить в корзину 5 шт.
на сумму 595 ֏
Описание
20V 1.7A 500mW 132mΩ@400mA,8V 1.2V@250uA 1PCSPChannel PicoStar-3 MOSFETs ROHS
Технические параметры
Continuous Drain Current (Id) | 1.7A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 132mΩ@400mA, 8V |
Drain Source Voltage (Vdss) | 20V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
Input Capacitance (Ciss@Vds) | 155pF@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 500mW |
Total Gate Charge (Qg@Vgs) | 910pC@10V |
Type | 1PCSPChannel |
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 250 |
Fall Time | 7 ns |
Forward Transconductance - Min | 8 S |
Height | 0.35 mm |
Id - Continuous Drain Current | -1.7 A |
Length | 0.73 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | Picostar-3 |
Packaging | Cut Tape |
Pd - Power Dissipation | 500 mW(1/2 W) |
Product Category | MOSFET |
Qg - Gate Charge | 0.7 nC |
Rds On - Drain-Source Resistance | 840 mOhm |
Rise Time | 5 ns |
RoHS | Details |
Series | CSD25480F3 |
Technology | Si |
Tradename | PicoStar |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 13 ns |
Typical Turn-On Delay Time | 9 ns |
Vds - Drain-Source Breakdown Voltage | -20 V |
Vgs - Gate-Source Voltage | -12 V |
Vgs th - Gate-Source Threshold Voltage | -950 mV |
Width | 0.64 mm |
Вес, г | 0.05 |
Техническая документация
Документация
pdf, 1111 КБ