CSD13306W, DSBGA-6 MOSFETs
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см. техническую документацию
см. техническую документацию
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от 50 шт. —
220 ֏
от 150 шт. —
190 ֏
от 500 шт. —
159 ֏
5 шт.
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Описание
NexFET N-Channel Power MOSFETs
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 3.5 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DSBGA-6 |
| Pd - Power Dissipation: | 1.9 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.2 nC |
| Rds On - Drain-Source Resistance: | 10.2 mOhms |
| Series: | CSD13306W |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Вес, г | 0.06 |
