CSD16412Q5A, VSONP-8(4.9x5.8) MOSFETs
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1 460 ֏
1 шт.
на сумму 1 460 ֏
Описание
VSONP-8(4.9x5.8) MOSFETs ROHS
Технические параметры
Continuous Drain Current (Id) | 80A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
Drain Source Voltage (Vdss) | 30V |
Type | 1PCSNChannel |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 2500 |
Fall Time: | 3.3 ns |
Forward Transconductance - Min: | 33 S |
Id - Continuous Drain Current: | 60 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 2.9 nC |
Rds On - Drain-Source Resistance: | 13 mOhms |
Rise Time: | 7.1 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 5.7 ns |
Typical Turn-On Delay Time: | 5.5 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -16 V, +16 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.19 |
Техническая документация
Datasheet CSD16412Q5A
pdf, 208 КБ