2SA2154CT-GR,L3F, CST-3 Bipolar Transistors - BJT
3 шт., срок 6 недель
245 ֏
1 шт.
на сумму 245 ֏
Альтернативные предложения1
Описание
Биполярный (BJT) транзистор PNP 50V 100mA 80MHz 100mW Surface Mount CST3
Технические параметры
Base Product Number | TLP351 -> |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
ECCN | EAR99 |
Frequency - Transition | 80MHz |
HTSUS | 8541.21.0095 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | SC-101, SOT-883 |
Power - Max | 100mW |
RoHS Status | RoHS Compliant |
Supplier Device Package | CST3 |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Brand: | Toshiba |
Collector- Base Voltage VCBO: | 50 V |
Collector- Emitter Voltage VCEO Max: | 50 V |
Collector-Emitter Saturation Voltage: | 180 mV |
Configuration: | Single |
DC Collector/Base Gain hFE Min: | 120 |
DC Current Gain hFE Max: | 400 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: | 10000 |
Gain Bandwidth Product fT: | 80 MHz |
Manufacturer: | Toshiba |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Mounting Style: | SMD/SMT |
Package/Case: | CST-3 |
Pd - Power Dissipation: | 100 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 250 КБ
Datasheet 2SA2154CT-GR,L3F
pdf, 258 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 14 августа1 | бесплатно |
HayPost | 18 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг