SSM3K7002KF,LXHF, MOSFETs SMOS Nch I: 0.4A, V: 60V, P: 270mW S-Min
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см. техническую документацию
см. техническую документацию
32142 шт., срок 7-9 недель
484 ֏
1 шт.
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Описание
Unclassified
Automotive N-/P-Channel SSMx MOSFETsToshiba Automotive N- and P-Channel SSMx MOSFETs are available in multiple package styles to cover various automotive applications in 12V to 48V battery systems. The AEC-qualified SSMx MOSFETS benefit from Toshiba's state-of-the-art wafer processes that suppress switching noise. The wafer processes and low resistance allow these MOSFETs to achieve a leading level of low on-resistance. The low resistance contributes to reduced energy loss and miniaturization of applications.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 17 ns |
| Id - Continuous Drain Current: | 400 mA |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | S-Mini-3 |
| Pd - Power Dissipation: | 900 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.75 Ohms |
| Rise Time: | 3.6 ns |
| Series: | SSM3K7002KF |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 38 ns |
| Typical Turn-On Delay Time: | 5.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 225 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
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