IPB019N08N3G
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см. техническую документацию
см. техническую документацию
11 100 ֏
1 шт.
на сумму 11 100 ֏
Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 180A I(D), 80V, 0.0019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 33 ns |
| Forward Transconductance - Min: | 103 S |
| Id - Continuous Drain Current: | 180 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-7 |
| Part # Aliases: | IPB19N8N3GXT SP000444110 IPB019N08N3GATMA1 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 206 nC |
| Rds On - Drain-Source Resistance: | 1.6 mOhms |
| Rise Time: | 73 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 86 ns |
| Typical Turn-On Delay Time: | 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 686 КБ
