ZXTP25100BFHTA, Транзистор TO236
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см. техническую документацию
см. техническую документацию
256 ֏
от 10 шт. —
190 ֏
1 шт.
на сумму 256 ֏
Описание
Транзисторы
Описание Транзистор TO236
Технические параметры
| Maximum Collector Base Voltage | -140 V |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum DC Collector Current | 2 A |
| Maximum Emitter Base Voltage | -7 V |
| Maximum Operating Frequency | 200 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.81 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 140 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 215 mV |
| Configuration: | Single |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 200 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.81 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZXTP25100 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.038 |
Техническая документация
Datasheet
pdf, 946 КБ
