SI1032R-T1-GE3, Транзистор: N-MOSFET; полевой; 20В; 0,14А; Idm: -0,5А; 0,13Вт; SC75A
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см. техническую документацию
см. техническую документацию
850 ֏
от 5 шт. —
489 ֏
от 50 шт. —
298 ֏
от 100 шт. —
232 ֏
Добавить в корзину 1 шт.
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Описание
N-канальный MOSFET, от 8 до 25 В, Vishay Semiconductor
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Resistance | 9 Ω |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -6 V, +6 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 280 mW |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SC-75 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 750 nC @ 4.5 V |
| Width | 0.86mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Maximum Continuous Drain Current (A) | 0.14 |
| Maximum Drain Source Resistance (mOhm) | 5000@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 3000 |
| Maximum Gate Source Voltage (V) | ±6 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 250 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SC |
| Supplier Package | SC-75A |
| Typical Fall Time (ns) | 25(Max) |
| Typical Gate Charge @ Vgs (nC) | 0.75@4.5V |
| Typical Rise Time (ns) | 25(Max) |
| Typical Turn-Off Delay Time (ns) | 50(Max) |
| Typical Turn-On Delay Time (ns) | 50(Max) |
| Вес, г | 0.02 |
