N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 SI1308EDL-T1-GE3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
143 ֏
Кратность заказа 3000 шт.
Добавить в корзину 3000 шт.
на сумму 429 000 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор: N-MOSFET; полевой; 30В; 1,4А; Idm: 6А; 0,3Вт; SC70
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Resistance | 185 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 400 mW |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V |
| Width | 1.35mm |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 1.5 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Part # Aliases: | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 |
| Pd - Power Dissipation: | 400 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.7 nC |
| Rds On - Drain-Source Resistance: | 132 mOhms |
| Rise Time: | 9 ns |
| Series: | SI1 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 2 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 1 |
