AIKQ120N75CP2XKSA1, IGBTs Y
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см. техническую документацию
см. техническую документацию
17 700 ֏
от 10 шт. —
15 200 ֏
от 25 шт. —
13 700 ֏
от 50 шт. —
12 400 ֏
1 шт.
на сумму 17 700 ֏
Описание
Unclassified
AIKQ120N75CP2 Duo Pack EDT2™ IGBTInfineon Technologies AIKQ120N75CP2 Duo Pack EDT2™ IGBT features a 750V collector-emitter blocking voltage capability. The AIKQ120N75CP2 has smooth switching characteristics, a very low VCE(sat), 1.30V (typ.), and a very tight parameter distribution. The device also has a low gate charge QG and is co-packed with a fast soft recovery emitter controlled by 3 diodes.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 750 V |
| Collector-Emitter Saturation Voltage: | 1.3 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 150 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Packaging: | Tube |
| Part # Aliases: | AIKQ120N75CP2 SP005416548 |
| Pd - Power Dissipation: | 682 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Collector Emitter Saturation Voltage | 1.3В |
| Collector Emitter Voltage Max | 750В |
| Continuous Collector Current | 150А |
| Power Dissipation | 682Вт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 175 C |
| Стандарты Автомобильной Промышленности | AEC-Q101 |
| Стиль Корпуса Транзистора | TO-247 Plus |
| Maximum Collector Emitter Voltage | 750 V |
| Maximum Continuous Collector Current | 120 A |
| Maximum Gate Emitter Voltage | 15V |
| Maximum Power Dissipation | 170 W |
| Number of Transistors | 3 |
| Package Type | TO247PLUS |
| Вес, г | 1 |
