CSD19531KCS, Транзистор N-канал 100В 100A TO-220
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840 ֏
от 50 шт. —
620 ֏
от 200 шт. —
550 ֏
1 шт.
на сумму 840 ֏
Описание
транзисторы полевые импортные
Описание Транзистор: N-MOSFET, полевой, 100В, 100А, 214Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Структура | N-канал | |
Корпус | to-220 | |
Base Product Number | CSD19531 -> | |
Current - Continuous Drain (Id) @ 25В°C | 100A (Ta) | |
Drain to Source Voltage (Vdss) | 100V | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
ECCN | EAR99 | |
FET Type | N-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V | |
HTSUS | 8541.29.0095 | |
Input Capacitance (Ciss) (Max) @ Vds | 3870pF @ 50V | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Type | Through Hole | |
Operating Temperature | -55В°C ~ 175В°C (TJ) | |
Package | Tube | |
Package / Case | TO-220-3 | |
Power Dissipation (Max) | 214W (Tc) | |
Rds On (Max) @ Id, Vgs | 7.7mOhm @ 60A, 10V | |
REACH Status | REACH Affected | |
RoHS Status | ROHS3 Compliant | |
Series | NexFETв„ў -> | |
Supplier Device Package | TO-220-3 | |
Technology | MOSFET (Metal Oxide) | |
Vgs (Max) | В±20V | |
Vgs(th) (Max) @ Id | 3.3V @ 250ВµA | |
Brand: | Texas Instruments | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 50 | |
Fall Time: | 4.1 ns | |
Id - Continuous Drain Current: | 200 A | |
Manufacturer: | Texas Instruments | |
Maximum Operating Temperature: | +175 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | Through Hole | |
Number of Channels: | 1 Channel | |
Package / Case: | TO-220-3 | |
Packaging: | Tube | |
Pd - Power Dissipation: | 179 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 38 nC | |
Rds On - Drain-Source Resistance: | 7.7 mOhms | |
Rise Time: | 7.2 ns | |
Series: | CSD19531KCS | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | NexFET | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 16 ns | |
Typical Turn-On Delay Time: | 8.4 ns | |
Vds - Drain-Source Breakdown Voltage: | 100 V | |
Vgs - Gate-Source Voltage: | -20 V, +20 V | |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V | |
Brand | Texas Instruments | |
Channel Mode | Enhancement | |
Configuration | Single | |
Factory Pack Quantity | 50 | |
Fall Time | 4.1 ns | |
Id - Continuous Drain Current | 105 A | |
Manufacturer | Texas Instruments | |
Maximum Operating Temperature | +175 C | |
Minimum Operating Temperature | -55 C | |
Mounting Style | Through Hole | |
Number of Channels | 1 Channel | |
Packaging | Tube | |
Pd - Power Dissipation | 179 W | |
Product Category | MOSFET | |
Qg - Gate Charge | 38 nC | |
Rds On - Drain-Source Resistance | 7.7 mOhms | |
Rise Time | 7.2 ns | |
RoHS | Details | |
Tradename | NexFET | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Typical Turn-Off Delay Time | 16 ns | |
Typical Turn-On Delay Time | 8.4 ns | |
Unit Weight | 0.211644 oz | |
Vds - Drain-Source Breakdown Voltage | 100 V | |
Vgs - Gate-Source Voltage | 20 V | |
Vgs th - Gate-Source Threshold Voltage | 2.7 V | |
Вес, г | 2.965 |
Техническая документация
Datasheet CSD19531KCS
pdf, 402 КБ