CSD25310Q2, Транзистор P-канал 20В 20A Q2
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Описание
транзисторы полевые импортные
MOSFET, P-CH, -20V, -20A, WSON-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0199ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-850mV; Power Dissipation Pd:2.9W; Transistor Case Style:WSON; No. of Pins:6Pins; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Технические параметры
| Структура | P-канал | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Resistance | 2390000 Ω | |
| Maximum Drain Source Voltage | 20 V | |
| Maximum Gate Threshold Voltage | 0.55V | |
| Number of Elements per Chip | 1 | |
| Package Type | WSON | |
| Pin Count | 6 | |
| Series | NexFET | |
| Transistor Material | Si | |
| Automotive | No | |
| Maximum Continuous Drain Current - (A) | 20 | |
| Maximum Drain Source Resistance - (mOhm) | 23.9@4.5V | |
| Maximum Drain Source Voltage - (V) | 20 | |
| Maximum Gate Source Voltage - (V) | ??8 | |
| Maximum Gate Threshold Voltage - (V) | 1.1 | |
| Maximum Power Dissipation - (mW) | 2900 | |
| Operating Temperature - (??C) | -55~150 | |
| Packaging | Tape and Reel | |
| Process Technology | NexFET | |
| Standard Package Name | SON | |
| Supplier Package | WSON EP | |
| Typical Gate Charge @ Vgs - (nC) | 3.6@4.5V | |
| Typical Input Capacitance @ Vds - (pF) | 504@10V | |
| Вес, г | 2.417 |
Техническая документация
Документация
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