CSD25402Q3A, Транзистор P-канал 20В 76A Q3AT
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278 ֏
1 шт.
на сумму 278 ֏
Описание
транзисторы полевые импортные
Описание Транзистор МОП силовой, Транзистор P-МОП, полевой, 20 В 72 А 2.8 Вт, VSON8
Технические параметры
Структура | P-канал | |
Continuous Drain Current (Id) @ 25В°C | 76A | |
Power Dissipation-Max (Ta=25В°C) | 2.8W | |
Rds On - Drain-Source Resistance | 8.9mО© @ 10A,4.5V | |
Transistor Polarity | P Channel | |
Vds - Drain-Source Breakdown Voltage | 20V | |
Vgs - Gate-Source Voltage | 1.15V @ 250uA | |
Channel Mode | Enhancement | |
Channel Type | P | |
Maximum Continuous Drain Current | 76 A | |
Maximum Drain Source Resistance | 8900000 Ω | |
Maximum Drain Source Voltage | 20 V | |
Maximum Gate Threshold Voltage | 0.65V | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | VSONP | |
Pin Count | 8 | |
Series | NexFET | |
Transistor Material | Si | |
Brand: | Texas Instruments | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
Fall Time: | 12 ns | |
Id - Continuous Drain Current: | 76 A | |
Manufacturer: | Texas Instruments | |
Maximum Operating Temperature: | +125 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package / Case: | VSONP-8 | |
Pd - Power Dissipation: | 69 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 7.5 nC | |
Rds On - Drain-Source Resistance: | 8.9 mOhms | |
Rise Time: | 7 ns | |
Series: | CSD25402Q3A | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | NexFET | |
Transistor Polarity: | P-Channel | |
Transistor Type: | 1 P-Channel Power MOSFET | |
Typical Turn-Off Delay Time: | 25 ns | |
Typical Turn-On Delay Time: | 10 ns | |
Vds - Drain-Source Breakdown Voltage: | 20 V | |
Vgs - Gate-Source Voltage: | -12 V, +12 V | |
Vgs th - Gate-Source Threshold Voltage: | 650 mV | |
Brand | Texas Instruments | |
Configuration | Single Channel | |
Factory Pack Quantity | 2500 | |
Fall Time | 12 ns | |
Forward Transconductance - Min | 59 S | |
Height | 0.9 mm | |
Id - Continuous Drain Current | -15 A | |
Length | 3.15 mm | |
Manufacturer | Texas Instruments | |
Maximum Operating Temperature | +125 C | |
Minimum Operating Temperature | -55 C | |
Mounting Style | SMD/SMT | |
Number of Channels | 1 Channel | |
Package / Case | VSONP-8 | |
Packaging | Reel | |
Pd - Power Dissipation | 2.8 W | |
Product Category | MOSFET | |
Qg - Gate Charge | 7.5 nC | |
Rise Time | 7 ns | |
RoHS | Details | |
Technology | Si | |
Tradename | NexFET | |
Transistor Type | 1 P-Channel | |
Typical Turn-Off Delay Time | 25 ns | |
Typical Turn-On Delay Time | 10 ns | |
Vgs th - Gate-Source Threshold Voltage | -900 mV | |
Width | 3 mm | |
Вес, г | 0.06 |
Техническая документация
Datasheet CSD25402Q3A
pdf, 1061 КБ
Datasheet CSD25402Q3A
pdf, 908 КБ