CSD25402Q3AT, Транзистор P-канал -20В -76A Q3AT
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484 ֏
от 50 шт. —
238 ֏
от 200 шт. —
229 ֏
1 шт.
на сумму 484 ֏
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Описание
транзисторы полевые импортные
CSD25402Q3A NexFET™ Power MOSFETTexas Instruments CSD25402Q3A NexFET™ Power MOSFET is -20V p-channel MOSFET designed to minimize losses in power conversion load management applications. This device comes in a SON 3.3mm x 3.3mm package that offers excellent thermal performance for the size of the device. Typical applications DC-DC converters, battery management, load switch, and battery protection.
Технические параметры
| Структура | P-канал | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 250 | |
| Fall Time: | 12 ns | |
| Forward Transconductance - Min: | 59 S | |
| Id - Continuous Drain Current: | 76 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | SON-8 | |
| Pd - Power Dissipation: | 69 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 9.7 nC | |
| Rds On - Drain-Source Resistance: | 300 mOhms | |
| Rise Time: | 7 ns | |
| Series: | CSD25402Q3A | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | P-Channel | |
| Transistor Type: | 1 P-Channel | |
| Typical Turn-Off Delay Time: | 25 ns | |
| Typical Turn-On Delay Time: | 10 ns | |
| Vds - Drain-Source Breakdown Voltage: | 20 V | |
| Vgs - Gate-Source Voltage: | -12 V, +12 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.15 V | |
| Вес, г | 0.03 |
