IPD60R600PFD7SAUMA1, N канал транзистор 650В 14А DPAK
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154 ֏
от 10 шт. —
75 ֏
1 шт.
на сумму 154 ֏
Описание
транзисторы полевые импортные
Experience the Difference in PowerInfineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ superjunction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on their individual design/system requirements from the currently broadest silicon-based SJ MOSFET portfolio in the industry. As one of the few manufacturers mastering all of the main three power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering consists of silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions, available to choose from, range from exceptional in price-performance through unrivaled in robustness to best-in-class devices. This enables customers to build the most efficient, environmentally friendliest, and most sustainable applications.
Технические параметры
Структура | N-канал | |
Корпус | DPAK(TO-252AA) | |
Brand: | Infineon Technologies | |
Channel Mode: | Enhancement | |
Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
Fall Time: | 50 ns | |
Id - Continuous Drain Current: | 4.7 A | |
Manufacturer: | Infineon | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -40 C | |
Moisture Sensitive: | Yes | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package/Case: | TO-252-3 | |
Packaging: | Reel, Cut Tape | |
Part # Aliases: | IPD60R600PFD7S SP005353996 | |
Pd - Power Dissipation: | 26 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 6 nC | |
Rds On - Drain-Source Resistance: | 1.978 Ohms | |
Rise Time: | 9 ns | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 42 ns | |
Typical Turn-On Delay Time: | 7.7 ns | |
Vds - Drain-Source Breakdown Voltage: | 600 V | |
Vgs - Gate-Source Voltage: | -20 V, +20 V | |
Vgs th - Gate-Source Threshold Voltage: | 4 V | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 650 V | |
Mounting Type | Surface Mount | |
Package Type | PG-TO 252-3 | |
Вес, г | 1 |