IPD60R600PFD7SAUMA1, N канал транзистор 650В 14А DPAK

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154 ֏
от 10 шт.75 ֏
1 шт. на сумму 154 ֏
Номенклатурный номер: 8018326335

Описание

транзисторы полевые импортные
Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ superjunction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on their individual design/system requirements from the currently broadest silicon-based SJ MOSFET portfolio in the industry. As one of the few manufacturers mastering all of the main three power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering consists of silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions, available to choose from, range from exceptional in price-performance through unrivaled in robustness to best-in-class devices. This enables customers to build the most efficient, environmentally friendliest, and most sustainable applications.

Технические параметры

Структура N-канал
Корпус DPAK(TO-252AA)
Brand: Infineon Technologies
Channel Mode: Enhancement
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 50 ns
Id - Continuous Drain Current: 4.7 A
Manufacturer: Infineon
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: TO-252-3
Packaging: Reel, Cut Tape
Part # Aliases: IPD60R600PFD7S SP005353996
Pd - Power Dissipation: 26 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 6 nC
Rds On - Drain-Source Resistance: 1.978 Ohms
Rise Time: 9 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 7.7 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Maximum Continuous Drain Current 14 A
Maximum Drain Source Voltage 650 V
Mounting Type Surface Mount
Package Type PG-TO 252-3
Вес, г 1

Техническая документация

Datasheet
pdf, 861 КБ
Datasheet
pdf, 948 КБ