IPD80R2K0P7ATMA1, N канал транзистор 800В 3А DPAK
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см. техническую документацию
см. техническую документацию
138 ֏
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78 ֏
от 40 шт. —
64 ֏
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на сумму 138 ֏
Описание
транзисторы полевые импортные
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio.
Технические параметры
| Структура | N-канал | |
| Корпус | DPAK(TO-252AA) | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Resistance | 2 Ω | |
| Maximum Drain Source Voltage | 800 V | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | DPAK(TO-252) | |
| Pin Count | 3 | |
| Series | 800V CoolMOS™ P7 | |
| Transistor Material | Si | |
| Automotive | No | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 3 | |
| Maximum Drain Source Resistance (mOhm) | 2000@10V | |
| Maximum Drain Source Voltage (V) | 800 | |
| Maximum Gate Source Voltage (V) | 20 | |
| Maximum Gate Threshold Voltage (V) | 3.5 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 24000 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 2 | |
| PPAP | No | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-252 | |
| Supplier Package | DPAK | |
| Tab | Tab | |
| Typical Fall Time (ns) | 20 | |
| Typical Gate Charge @ 10V (nC) | 9 | |
| Typical Gate Charge @ Vgs (nC) | 9@10V | |
| Typical Gate to Drain Charge (nC) | 4 | |
| Typical Input Capacitance @ Vds (pF) | 175@500V | |
| Typical Rise Time (ns) | 8 | |
| Typical Turn-Off Delay Time (ns) | 40 | |
| Typical Turn-On Delay Time (ns) | 10 | |
| Current - Continuous Drain (Id) @ 25В°C | 3A(Tc) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 500V | |
| Manufacturer | Infineon Technologies | |
| Operating Temperature | -55В°C ~ 150В°C(TJ) | |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 | |
| Power Dissipation (Max) | 24W(Tc) | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 940mA, 10V | |
| Supplier Device Package | PG-TO252-3 | |
| Technology | MOSFET(Metal Oxide) | |
| Vgs (Max) | В±20V | |
| Vgs(th) (Max) @ Id | 3.5V @ 50ВµA | |
| Вес, г | 0.36 |
