IRF9Z14
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см. техническую документацию
см. техническую документацию
1 320 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
1 060 ֏
от 10 шт. —
910 ֏
от 15 шт. —
850 ֏
2 шт.
на сумму 2 640 ֏
Описание
Электроэлемент
P CHANNEL MOSFET, -60V, 6.7A TO-220, Transistor Polarity:P Channel, Continuous Drain Current Id:-6.7A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):500mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2V, MSL:- , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Base Product Number | IRF9 -> |
| Current - Continuous Drain (Id) @ 25В°C | 6.7A (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 43W (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 6.7 A |
| Maximum Drain Source Resistance | 500 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 43 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Width | 4.7mm |
| Вес, г | 2.67 |
