IRFI9610GPBF, MOSFET 200V P-CH HEXFET MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 27 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Вес, г | 2 |
