SI2323DS-T1-BE3, MOSFETs P-CHANNEL 20-V (D-S)
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см. техническую документацию
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Описание
Unclassified
Технические параметры
Brand: | Vishay/Siliconix |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 48 ns |
Id - Continuous Drain Current: | 4.7 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Part # Aliases: | SI2323DS-T1-E3 |
Pd - Power Dissipation: | 1.25 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 12.5 nC |
Rds On - Drain-Source Resistance: | 39 mOhms |
Rise Time: | 43 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 71 ns |
Typical Turn-On Delay Time: | 25 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 159 КБ