CSD19535KTT, Транзистор: N-MOSFET
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Описание
100V 200A 300W 3.4mΩ@100A,10V 3.4V@250uA null TO-263-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 200A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.4mΩ@100A, 10V |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.4V@250uA |
| Input Capacitance (Ciss@Vds) | 7.93nF@50V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 300W |
| Total Gate Charge (Qg@Vgs) | 98nC@10V |
| Type | null |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 301 S |
| Id - Continuous Drain Current: | 197 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 75 nC |
| Rds On - Drain-Source Resistance: | 3.4 mOhms |
| Rise Time: | 18 ns |
| Series: | CSD19535KTT |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Вес, г | 1.21 |
Техническая документация
Datasheet
pdf, 597 КБ
