MJD42CQ-13, Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
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см. техническую документацию
см. техническую документацию
800 ֏
от 10 шт. —
660 ֏
от 100 шт. —
418 ֏
от 500 шт. —
336 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
MJD Automotive Medium Power TransistorsDiodes Inc. MJD Automotive Medium Power Transistors are bipolar transistors that are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. Each device has a collector-emitter breakdown voltage of 50V or 100V (minimum). The Diodes Inc. MJD Automotive Medium Power Transistors come in a TO-252 (DPAK) package and are ideal for power switching or amplification applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 7 V |
| Configuration: | Single |
| Continuous Collector Current: | -6 A |
| DC Collector/Base Gain hfe Min: | 15 |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-252-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 2.7 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q100 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 709 КБ
