ZXT10P12DE6TA, Bipolar Transistors - BJT 12V PNP SuperSOT4
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см. техническую документацию
см. техническую документацию
750 ֏
от 10 шт. —
660 ֏
от 100 шт. —
405 ֏
от 500 шт. —
325 ֏
1 шт.
на сумму 750 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 12 V |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Saturation Voltage: | 195 mV |
| Configuration: | Single |
| Continuous Collector Current: | -3 A |
| DC Current Gain hFE Max: | 300 at 10 mA, 2 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 110 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-6 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZXT10 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.01 |
Техническая документация
Datasheet ZXT10P12DE6TA
pdf, 432 КБ
