IDM05G120C5XTMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
7 300 ֏
от 2 шт. —
7 000 ֏
Добавить в корзину 1 шт.
на сумму 7 300 ֏
Описание
Электроэлемент
SIC SCHOTTKY DIODE, 1.2KV, 22.2A, TO-252; Product Range:thinQ 5G 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:22.2A; Total Capacitive Charge Qc:24nC;
Технические параметры
Automotive | No |
Maximum Continuous Forward Current - (A) | 22.2 |
Maximum Power Dissipation - (mW) | 74000 |
Military | No |
Operating Temperature - (??C) | -55~175 |
Packaging | Tape and Reel |
Peak Forward Voltage - (V) | 1.8@5A |
Peak Non-Repetitive Surge Current - (A) | 59 |
Peak Reverse Current - (uA) | 33 |
Peak Reverse Repetitive Voltage - (V) | 1200 |
Pin Count | 3 |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Diode Technology | SiC Schottky |
Diode Type | SiC Schottky |
Maximum Continuous Forward Current | 5A |
Mounting Type | SMD |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252-2) |
Peak Reverse Repetitive Voltage | 1200V |
Rectifier Type | Schottky Diode |
Вес, г | 1 |