BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications.
Технические параметры
| Configuration | Single Diode |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 20 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 192 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Brand: | Bourns |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 40 A |
| Continuous Collector Current Ic Max: | 40 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Bourns |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 192 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | BID |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 1 |
