Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay E Series Power MOSFET reduced switching and conduction losses. Low figure-of-merit (FOM) Ron x Qg
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Resistance | 0.08 Ω |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Threshold Voltage | 5V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 2 |
| Package Type | TO-247AC |
| Pin Count | 3 |
| Series | E Series |
| Transistor Material | Si |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Fall Time: | 31 ns |
| Forward Transconductance - Min: | 4.6 S |
| Id - Continuous Drain Current: | 35 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247AC-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 227 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Rise Time: | 96 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 37 ns |
| Typical Turn-On Delay Time: | 31 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Вес, г | 1 |
