SI3473CDV-T1-GE3, Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R
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298 ֏
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Si3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 40 ns |
Id - Continuous Drain Current: | 8 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TSOP-6 |
Part # Aliases: | SI3473CDV-T1-BE3 SI3473CDV-GE3 |
Pd - Power Dissipation: | 4.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 65 nC |
Rds On - Drain-Source Resistance: | 22 mOhms |
Rise Time: | 55 ns |
Series: | SI3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 60 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current | 8 A |
Maximum Drain Source Resistance | 36 mΩ |
Maximum Drain Source Voltage | 12 V |
Maximum Gate Source Voltage | ±8 V |
Maximum Gate Threshold Voltage | -1V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 4.2 W |
Minimum Gate Threshold Voltage | -0.4V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | TSOP-6 |
Pin Count | 6 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 43 nC @ 10 V |
Width | 1.7mm |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 230 КБ