CSD19532Q5B
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см. техническую документацию
см. техническую документацию
2 610 ֏
от 2 шт. —
2 150 ֏
от 5 шт. —
1 810 ֏
от 10 шт. —
1 680 ֏
Добавить в корзину 1 шт.
на сумму 2 610 ֏
Описание
Электроэлемент
MOSFET, N CHANNEL, 100V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 84 S |
| Id - Continuous Drain Current: | 140 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 195 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Rds On - Drain-Source Resistance: | 4.9 mOhms |
| Rise Time: | 6 ns |
| Series: | CSD19532Q5B |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Вес, г | 0.345 |
Техническая документация
Datasheet
pdf, 901 КБ
