UJ3D1205TS

UJ3D 650V/1200V/1700V SiC Schottky Diodes

UnitedSiC UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (V F ). With zero reverse recovery charge and high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. These devices feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Q c (Q rr ) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949 certified supply chain, making them ideal for automotive applications.