SUD09P10-195-GE3, Транзистор полевой MOSFET P-канальный 100В 8.8A
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET P-канальный 100В 8.8A
Технические параметры
| Корпус | DPAK/TO-252AA | |
| Brand: | Vishay Semiconductors | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: | 2000 | |
| Fall Time: | 9 ns | |
| Forward Transconductance - Min: | 12 S | |
| Id - Continuous Drain Current: | 8.8 A | |
| Manufacturer: | Vishay | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | DPAK-3(TO-252-3) | |
| Part # Aliases: | SUD09P10-195-BE3 | |
| Pd - Power Dissipation: | 113.6 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 23.2 nC | |
| Rds On - Drain-Source Resistance: | 195 mOhms | |
| Rise Time: | 12 ns | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | P-Channel | |
| Transistor Type: | 1 P-Channel | |
| Typical Turn-Off Delay Time: | 33 ns | |
| Typical Turn-On Delay Time: | 7 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V | |
| Case | DPAK, TO252 | |
| Drain current | -8.8A | |
| Drain-source voltage | -100V | |
| Gate charge | 34.8nC | |
| Gate-source voltage | ±20V | |
| Kind of channel | enhanced | |
| Kind of package | reel, tape | |
| Manufacturer | VISHAY | |
| Mounting | SMD | |
| On-state resistance | 0.195Ω | |
| Polarisation | unipolar | |
| Power dissipation | 32.1W | |
| Pulsed drain current | -15A | |
| Type of transistor | P-MOSFET | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Maximum Continuous Drain Current - (A) | 8.8 | |
| Maximum Drain Source Resistance - (mOhm) | 195@10V | |
| Maximum Drain Source Voltage - (V) | 100 | |
| Maximum Gate Source Voltage - (V) | ??20 | |
| Maximum Gate Threshold Voltage - (V) | 2.5 | |
| Maximum Power Dissipation - (mW) | 2500 | |
| Military | No | |
| Number of Elements per Chip | 1 | |
| Operating Temperature - (??C) | -55~150 | |
| Packaging | Tape and Reel | |
| Pin Count | 3 | |
| Process Technology | Single | |
| Standard Package Name | TO-252 | |
| Supplier Package | DPAK | |
| Typical Gate Charge @ 10V - (nC) | 23.3 | |
| Typical Gate Charge @ Vgs - (nC) | 23.3@10VI11.7@4.5V | |
| Typical Input Capacitance @ Vds - (pF) | 1055@50V | |
| Вес, г | 0.55 |
