DXTN07100BFG-7, PowerDI-8(3.3x3.3) BIpolar TransIstors - BJT ROHS

DXTN07100BFG-7, PowerDI-8(3.3x3.3) BIpolar TransIstors - BJT ROHS
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см. техническую документацию
580 ֏
от 10 шт.374 ֏
от 30 шт.330 ֏
от 100 шт.290 ֏
1 шт. на сумму 580 ֏
Номенклатурный номер: 8020312222
Бренд: DIODES INC.

Описание

DXTN07x Bipolar Junction Transistors (BJTs)
Diodes Incorporated DXTN07x Bipolar Junction Transistors (BJTs) are offered in smaller, thermally efficient PowerDI®3333-8 packages. These transistors are contained in a PowerDI3333 surface mount 3.3mm x 3.3mm x 0.8mm package. The package occupies 70% less printed circuit board (PCB) space than the traditional small-outline transistor (SOT223). PowerDI3333 packages increase PCB throughput with wettable flanks, which help facilitate high-speed, automatic optical inspection (AOI) of solder joints. These NPN and PNP transistors can perform functions such as linear or LDO regulation, gate driving of MOSFETs or insulated-gate bipolar transistors (IGBT) and load switches across industrial and consumer applications.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 150 mV
Configuration: Single
Continuous Collector Current: 2 A
DC Collector/Base Gain hfe Min: 100
DC Current Gain hFE Max: 300
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 2000
Gain Bandwidth Product fT: 175 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: PowerDI3333-8
Pd - Power Dissipation: 3.1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.09

Техническая документация

Datasheet
pdf, 862 КБ