DDTC115TE-7-F, Digital Transistors PRE-BIAS NPN 150mW
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см. техническую документацию
см. техническую документацию
484 ֏
от 10 шт. —
308 ֏
от 100 шт. —
185 ֏
от 1000 шт. —
78 ֏
1 шт.
на сумму 484 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Configuration: | Single |
| Continuous Collector Current: | 0.1 A |
| DC Collector/Base Gain hfe Min: | 100 |
| DC Current Gain hFE Max: | 600 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Pd - Power Dissipation: | 150 mW |
| Peak DC Collector Current: | 100 mA |
| Product Category: | Bipolar Transistors-Pre-Biased |
| Product Type: | BJTs-Bipolar Transistors-Pre-Biased |
| Series: | DDTC115 |
| Subcategory: | Transistors |
| Transistor Polarity: | NPN |
| Type: | NPN Small Signal Surface Mount Transistor |
| Typical Input Resistor: | 100 kOhms |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 425 КБ
